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MSM51V16800DSL - 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE From old datasheet system

MSM51V16800DSL_282423.PDF Datasheet


 Full text search : 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE From old datasheet system


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PART Description Maker
HM5216808/5216408C HM5216808CTT-80 1048576-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3) 2097152-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
x8 SDRAM x8 SDRAM内存
Hitachi,Ltd.
MSC23B2321D-XXDS4 MSC23B2321D MSC23B2321D-XXBS4 From old datasheet system
2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
4PDT 5A MINI 24VAC
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
MITSUBISHI[Mitsubishi Electric Semiconductor]
TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No
4,194,304 WORD x BIT DYNAMIC RAM
4194304 WORD x BIT DYNAMIC RAM
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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Renesas Electronics Corporation
M5M465165DJ M5M465165DTP-5 M5M465165DTP-5S M5M4651 EDO MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
MITSUBISHI[Mitsubishi Electric Semiconductor]
TC511664BZ TC511664B 65536 word x 16 bit DRAM
65,536 WORD x 16 BIT DYNAMIC RAM
Toshiba Semiconductor
HM514400B HM514400BL HM514400C HM514400CL HM514400 1,048,576-word x 4-bit dynamic random access memory, 80ns
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Hitachi Semiconductor
MC-4216LFC721 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块) 3.3 V工作电压800万字72位动态内存模块(工作电压.3伏的动态内存模块)
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NEC Corp.
M6MGT331S8AKT M6MGB331S8AKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Electronics Corporation
M6MGB331S8BKT M6MGT331S8BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Electronics Corporation.
 
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